Invention Grant
- Patent Title: Power amplifier
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Application No.: US16354277Application Date: 2019-03-15
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Publication No.: US10826446B2Publication Date: 2020-11-03
- Inventor: Amin Hamidian , Mark Pieter van der Heijden , Jozef Reinerus Maria Bergervoet
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@49647e05
- Main IPC: H03F3/16
- IPC: H03F3/16 ; H03F3/217 ; H01F27/28 ; H01F30/02 ; H01L23/66 ; H03F1/56 ; H03F3/195

Abstract:
A power amplifier. The power amplifier includes a plurality of parallel coupled transistors. Each transistor has a control terminal coupled to receive a signal to be amplified and an output terminal coupled to a node. The power amplifier also includes a matching network having an input coupled to the node and an output coupleable to a load. The power amplifier further includes a first circuit branch forming a choke and harmonic trap of the power amplifier. The first circuit branch includes a first inductance, a second inductance and a first capacitor. The first inductance has a first terminal coupled to the node and a second terminal coupled to a first terminal of the second inductance. A second terminal of the second inductance is coupled to AC ground. The first capacitor is coupled in parallel with the second inductance.
Public/Granted literature
- US20190334489A1 POWER AMPLIFIER Public/Granted day:2019-10-31
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