Invention Grant
- Patent Title: Atomic layer deposition of lead sulfide for infrared optoelectronic devices
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Application No.: US15763290Application Date: 2015-09-24
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Publication No.: US10826005B2Publication Date: 2020-11-03
- Inventor: Sachin Kinge , Jixian Xu , Brandon Sutherland , Sjoerd Hoogland , Edward Sargent
- Applicant: TOYOTA MOTOR EUROPE , THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO
- Applicant Address: BE Brussels CA Toronto
- Assignee: TOYOTA MOTOR EUROPE,THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO
- Current Assignee: TOYOTA MOTOR EUROPE,THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO
- Current Assignee Address: BE Brussels CA Toronto
- Agency: Oliff PLC
- International Application: PCT/EP2015/072030 WO 20150924
- International Announcement: WO2017/050382 WO 20170330
- Main IPC: H01L51/42
- IPC: H01L51/42 ; H01L31/032 ; H01L31/0352
Abstract:
A PIN type infrared photodiode including a first electrode, a n-type semiconductor, an atomic layer deposition coating of lead sulfide, a p-type semiconductor and a second electrode, wherein the n-type semiconductor comprises nanowires conformally coated with the atomic layer deposition coating of lead sulfide.
Public/Granted literature
- US20180309076A1 ATOMIC LAYER DEPOSITION OF LEAD SULFIDE FOR INFRARED OPTOELECTRONIC DEVICES Public/Granted day:2018-10-25
Information query
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