Invention Grant
- Patent Title: LDMOS device having hot carrier suppression
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Application No.: US16184015Application Date: 2018-11-08
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Publication No.: US10825927B2Publication Date: 2020-11-03
- Inventor: Ryuhei Kojima , Keisuke Nagao
- Applicant: ABLIC Inc.
- Applicant Address: JP Chiba
- Assignee: ABLIC INC.
- Current Assignee: ABLIC INC.
- Current Assignee Address: JP Chiba
- Agency: Brinks Gilson & Lione
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@66078bd8
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/417 ; H01L29/423 ; H01L29/08 ; H01L29/06 ; H01L29/66 ; H01L29/10
Abstract:
A first diffusion region of a first conductivity type and a second diffusion region of a second conductivity type are formed next to each other in a semiconductor substrate. Drain and source contact regions of the first conductivity type are formed in the first and second diffusion region, respectively. A trench insulating region is formed in the first diffusion region between the drain and source contact regions. A third diffusion region of the second conductivity type is formed next to a side wall of the trench insulating region on the source contact region side in the first diffusion region between the source contact region and the trench insulating region. A gate electrode is formed on the semiconductor substrate through a gate insulating film to cover an area from an end portion of the source contact region to at least a part of a top surface of the trench insulating region.
Public/Granted literature
- US20190148543A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-05-16
Information query
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