Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US16159360Application Date: 2018-10-12
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Publication No.: US10825824B2Publication Date: 2020-11-03
- Inventor: Nam Jae Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@72e4f4f9
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L23/528 ; H01L27/11548 ; H01L27/11582 ; H01L27/11575 ; H01L27/11524 ; H01L27/11556 ; H01L27/1157 ; H01L27/11551 ; H01L27/11578 ; H01L27/11573 ; H01L27/11526

Abstract:
A semiconductor device may include a first cell structure, a second cell structure, a pad structure, a circuit, and an opening. The pad structure may include a first stepped structure and a second stepped structure located between the first cell structure and the second cell structure. The first stepped structure may include first pads electrically connected to the first and second cell structures and stacked on top of each other, and the second stepped structure may include second pads electrically connected to the first and second cell structures and stacked on top of each other. The circuit may be located under the pad structure. The opening may pass through the pad structure to expose the circuit, and may be located between the first stepped structure and the second stepped structure to insulate the first pads and the second pads from each other.
Public/Granted literature
- US11018145B2 Semiconductor device and method of manufacturing the same Public/Granted day:2021-05-25
Information query
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