Invention Grant
- Patent Title: Low resistance source-drain contacts using high temperature silicides
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Application No.: US15855049Application Date: 2017-12-27
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Publication No.: US10825740B2Publication Date: 2020-11-03
- Inventor: Praneet Adusumilli , Hemanth Jagannathan , Christian Lavoie , Ahmet S. Ozcan
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Fleit Intellectual Property Law
- Agent Thomas S. Grzesik
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L21/8238 ; H01L29/06 ; H01L21/3215 ; H01L21/265 ; H01L21/285 ; H01L29/45 ; H01L29/66 ; H01L27/092 ; H01L21/84 ; H01L27/12 ; H01L29/16 ; H01L29/161 ; H01L29/24 ; H01L29/423 ; H01L29/786 ; H01L21/768
Abstract:
A semiconductor structure and a method for fabricating the same. The semiconductor structure includes at least one semiconductor fin disposed on a substrate. A disposable gate contacts the at least one semiconductor fin. A spacer is disposed on the at least one semiconductor fin and in contact with the disposable gate. Epitaxially grown source and drain regions are disposed at least partially within the at least one semiconductor fin. A first one of silicide and germanide is disposed on and in contact with the source region. A second one of one of silicide and germanide is disposed on and in contact with the drain region. The method includes epitaxially growing source/drain regions within a semiconductor fin. A contact metal layer contacts the source/drain regions. One of a silicide and a germanide is formed on the source/drain regions from the contact metal layer prior to removing the disposable gate.
Public/Granted literature
- US20180122646A1 LOW RESISTANCE SOURCE-DRAIN CONTACTS USING HIGH TEMPERATURE SILICIDES Public/Granted day:2018-05-03
Information query
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