Invention Grant
- Patent Title: Method of producing stresses in a semiconductor wafer
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Application No.: US16736166Application Date: 2020-01-07
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Publication No.: US10825732B2Publication Date: 2020-11-03
- Inventor: Lukas Lichtensteiger , Wolfram Drescher
- Applicant: Siltectra GmbH
- Applicant Address: DE Dresden
- Assignee: Siltectra GmbH
- Current Assignee: Siltectra GmbH
- Current Assignee Address: DE Dresden
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@f5669ef
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/304 ; H01L21/02 ; H01L21/67 ; H01L21/683

Abstract:
A method of splitting a semiconductor wafer includes: inducing a first stress distribution in the semiconductor wafer by exposing the semiconductor wafer to a first radiation process; inducing a second stress distribution in the semiconductor wafer by exposing the semiconductor wafer to a second radiation process, the second radiation process including applying laser energy to an edge of the semiconductor wafer; and splitting the semiconductor wafer after inducing the first stress distribution and the second stress distribution.
Public/Granted literature
- US20200144121A1 Method of Producing Stresses in a Semiconductor Wafer Public/Granted day:2020-05-07
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