Invention Grant
- Patent Title: Plasma processing apparatus
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Application No.: US15755338Application Date: 2017-03-21
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Publication No.: US10825657B2Publication Date: 2020-11-03
- Inventor: Kenetsu Yokogawa , Masakazu Isozaki , Masahito Mori
- Applicant: HITACHI HIGH-TECH CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECH CORPORATION
- Current Assignee: HITACHI HIGH-TECH CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge, P.C.
- International Application: PCT/JP2017/011093 WO 20170321
- International Announcement: WO2018/173095 WO 20180927
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
A plasma processing apparatus with improved yield, adapted to include a vacuum container, a processing chamber disposed inside thereof, and in which a plasma is formed, a sample table disposed in the processing chamber and on which a sample is placed, two electrodes which have a film shape, disposed within the sample table, and to which power for attracting the sample is supplied so that different polarities are formed, a coiled portion in which two power supply lines are wound in parallel around the same axis, and a bypass line which connects the two power supply lines between the coiled portion and the two electrodes and has a capacitor.
Public/Granted literature
- US20200234924A1 PLASMA PROCESSING APPARATUS Public/Granted day:2020-07-23
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