Invention Grant
- Patent Title: Memory system for removing memory cell fault and method thereof
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Application No.: US16026633Application Date: 2018-07-03
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Publication No.: US10825502B2Publication Date: 2020-11-03
- Inventor: Woong-Rae Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1692a19e
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/406 ; G11C29/42 ; G06F11/10 ; G11C29/52 ; G11C29/02 ; G11C29/04

Abstract:
A memory system includes: a memory device that includes a plurality of ranks; and a memory controller suitable for deciding a plurality of refresh cycles for respective combinations of the plurality of ranks and at least one program executed onto the memory device based on a performance diagnosis result of each of the ranks when the program is executed, and controlling a refresh operation to be performed onto the ranks based on the decided refresh cycles.
Public/Granted literature
- US20190164595A1 MEMORY SYSTEM FOR REMOVING MEMORY CELL FAULT AND METHOD THEREOF Public/Granted day:2019-05-30
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