A standard cell layout for a data storage circuit includes a latch and an initialization circuit. Metallization levels over the standard cell layout support circuit interconnections. At least one metallization level is provided for metal programming of an initialization configuration of the data storage circuit. The at least one metallization level may have: a first wiring layout for interconnecting the initialization circuit to the latch for configuration programming of the data storage circuit as an initialization in reset device (assertion of an initialization signal causing the data storage circuit data output to be reset), or a second wiring layout for interconnecting the initialization circuit to the latch for configuration programming of the data storage circuit as an initialization in set device (assertion of the initialization signal causing the data storage circuit data output to be set).