Invention Grant
- Patent Title: Method of manufacturing light-emitting element
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Application No.: US16837150Application Date: 2020-04-01
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Publication No.: US10804427B2Publication Date: 2020-10-13
- Inventor: Kazuki Yamaguchi , Haruki Takeda , Yoshitaka Sumitomo
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-Shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-Shi
- Agency: Foley & Lardner LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5972a4f8
- Main IPC: H01L21/301
- IPC: H01L21/301 ; B23K26/53 ; B23K26/08 ; B23K26/40 ; H01L21/263 ; H01L21/268 ; H01L33/00 ; H01L21/67 ; B23K26/364 ; H01L21/78 ; B23K26/0622 ; B23K101/40 ; B23K101/36

Abstract:
A method of manufacturing a light-emitting element includes: providing a wafer including: a substrate, and a semiconductor structure; forming a plurality of modified regions inside the substrate of the wafer by irradiating the substrate with a laser beam; and separating the wafer into a plurality of light-emitting elements after said irradiating the substrate with the laser beam. Said forming the plurality of modified regions includes: scanning the laser beam along a plurality of first lines, the plurality of first lines extending in a first direction and being arranged in a second direction, the first direction being parallel to the first surface, the second direction intersecting the first direction and being parallel to the first surface, and scanning the laser beam along a plurality of second lines, the plurality of second lines extending in the second direction and being arranged in the first direction.
Public/Granted literature
- US20200227587A1 METHOD OF MANUFACTURING LIGHT-EMITTING ELEMENT Public/Granted day:2020-07-16
Information query
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