Invention Grant
- Patent Title: Integrated circuit containing a decoy structure formed by an electrically insulated silicide sector
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Application No.: US16036639Application Date: 2018-07-16
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Publication No.: US10804222B2Publication Date: 2020-10-13
- Inventor: Julien Delalleau , Christian Rivero
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMicrolectronics (Rousset) SAS
- Current Assignee: STMicrolectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Crowe & Dunlevy
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@70c05d51
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L23/00 ; H01L23/528 ; H01L29/06 ; H01L27/088 ; H01L29/10 ; H01L27/02 ; H01L21/8234 ; H01L21/3205 ; H01L21/3213 ; H01L29/49 ; H01L29/45
Abstract:
An integrated circuit includes a substrate, an interconnection part, and an isolating region located between the substrate and the interconnection part. A decoy structure is located within the isolating region and includes a silicided sector which is electrically isolated from the substrate.
Public/Granted literature
- US20190027447A1 INTEGRATED CIRCUIT CONTAINING A DECOY STRUCTURE Public/Granted day:2019-01-24
Information query
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