A first semiconductor die is provided, which includes a first substrate, first semiconductor devices, first interconnect-level dielectric material layers, first metal interconnect structures, and first bonding pads. A second semiconductor die is provided, which includes a semiconductor-on-insulator (SOI) substrate, second semiconductor devices, second interconnect-level dielectric material layers, second metal interconnect structures, and second bonding pads. The second bonding pads are bonded to the first bonding pads. A bulk substrate layer of the SOI substrate is removed exposing an insulating material layer of the SOI substrate, which may be retained or also removed. An external bonding pad is electrically connected to a node of the second semiconductor devices.