- Patent Title: SiC film structure and method for manufacturing SiC film structure
-
Application No.: US16664013Application Date: 2019-10-25
-
Publication No.: US10804096B2Publication Date: 2020-10-13
- Inventor: Satoshi Kawamoto
- Applicant: ADMAP INC.
- Applicant Address: JP Okayama
- Assignee: ADMAP INC.
- Current Assignee: ADMAP INC.
- Current Assignee Address: JP Okayama
- Agency: Oliff PLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/50
Abstract:
A SiC film structure capable of providing a sealing structure. A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; and a lid configured to cover the opening.
Public/Granted literature
- US20200279732A1 SiC FILM STRUCTURE AND METHOD FOR MANUFACTURING SiC FILM STRUCTURE Public/Granted day:2020-09-03
Information query
IPC分类:
