Invention Grant
- Patent Title: Microwave plasma source, microwave plasma processing apparatus and plasma processing method
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Application No.: US15883670Application Date: 2018-01-30
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Publication No.: US10804077B2Publication Date: 2020-10-13
- Inventor: Toshihiko Iwao
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4084ea30
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01J37/244 ; H01L21/67 ; H01L21/66 ; C23C16/455 ; C23C16/52 ; C23C16/511 ; H01L21/02 ; H01L21/687

Abstract:
A microwave plasma source for generating a microwave plasma inside a chamber by radiating a microwave into the chamber, includes: a microwave oscillator for oscillating the microwave and vary an oscillation frequency thereof; a waveguide through which the microwave propagates; an antenna part including a slot antenna for radiating the microwave into the chamber and having a predetermined pattern of slots, and a microwave-transmitting plate constituting a ceiling plate of the chamber and made of a dielectric material through which the microwave radiated from the slots transmits; temperature detectors for detecting temperatures at plural positions of the antenna part outside the chamber when the microwave plasma is generated; and a frequency controller for receiving detection signals obtained by the temperature detectors and controlling the oscillation frequency of the microwave oscillator so that a plasma density distribution inside the chamber becomes a desired distribution based on the detection signals.
Public/Granted literature
- US20180218883A1 Microwave Plasma Source, Microwave Plasma Processing Apparatus and Plasma Processing Method Public/Granted day:2018-08-02
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