Invention Grant
- Patent Title: Overcurrent protection device for semiconductor device
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Application No.: US15876274Application Date: 2018-01-22
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Publication No.: US10770888B2Publication Date: 2020-09-08
- Inventor: Kei Minagawa
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@75ea1ffa
- Main IPC: H02H7/12
- IPC: H02H7/12 ; H02M1/00 ; H02M1/32 ; G01R19/00 ; H03K17/28 ; H02H1/00 ; H02M1/08 ; H02M5/458 ; H02M7/5387 ; H03K17/082

Abstract:
The overcurrent protection device includes: a current detection unit configured to detect, as a sense voltage, a sense current flowing through a current sense terminal of a voltage-controlled semiconductor device; an overcurrent detection unit configured to compare the sense voltage detected by the current detection unit with an overcurrent threshold value to output an overcurrent detection signal; a mode determination unit configured to determine whether a superposition mode in which a transient sense voltage is superimposed on the sense voltage or a normal mode in which the transient sense voltage is not superimposed on the sense voltage; and a timing adjustment unit configured to adjust a detection start timing of the overcurrent detection signal based on a result of determination by the mode determination unit.
Public/Granted literature
- US20180145503A1 OVERCURRENT PROTECTION DEVICE FOR SEMICONDUCTOR DEVICE Public/Granted day:2018-05-24
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