Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16518375Application Date: 2019-07-22
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Publication No.: US10770582B2Publication Date: 2020-09-08
- Inventor: Yusuke Kobayashi , Manabu Takei , Naoki Kumagai
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4887cb46
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/417 ; H01L29/47 ; H01L29/16 ; H01L29/66 ; H01L29/423
Abstract:
A vertical MOSFET having a trench gate structure includes an n−-type drift layer and a p-type base layer formed by epitaxial growth. In the n−-type drift layer, an n-type region, a first p+-type region, and a second p+-type region are provided. A metal film of a trench SBD is connected to a source electrode; and a p+-type region is provided between the source electrode and the p-type base layer.
Public/Granted literature
- US20200083369A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-03-12
Information query
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