Invention Grant
- Patent Title: SiC-MOSFET and method of manufacturing the same
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Application No.: US15816697Application Date: 2017-11-17
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Publication No.: US10770579B2Publication Date: 2020-09-08
- Inventor: Hidefumi Takaya , Yasushi Urakami , Yukihiko Watanabe
- Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA , DENSO CORPORATION
- Applicant Address: JP Toyota JP Kariya
- Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
- Current Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
- Current Assignee Address: JP Toyota JP Kariya
- Agency: Oliff PLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@47ac147b
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/10 ; H01L29/16 ; H01L29/417
Abstract:
An n-type drift region, a p-type first body region and a p-type contact region are formed on an SiC substrate by epitaxial growth. An opening is formed within the contact region by etching such that the first body region is exposed through the opening, and a p-type second body region is formed on the first body region exposed through the opening by epitaxial growth. An n-type source region is formed by epitaxial growth, and an opening is formed within a part of the source region located on the contact region by etching such that the contact region is exposed through the opening. A trench is formed by etching such that the trench extends from the source region to the drift region through the opening of the contact region, and a gate insulating film and a gate electrode are formed within the trench.
Public/Granted literature
- US20180182889A1 SiC-MOSFET AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-06-28
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