Invention Grant
- Patent Title: Semiconductor devices and methods for forming a semiconductor device
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Application No.: US16210624Application Date: 2018-12-05
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Publication No.: US10770578B2Publication Date: 2020-09-08
- Inventor: Franz Hirler
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4419b57f
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L29/08 ; H01L29/66

Abstract:
A semiconductor device includes an electrical device and has an output capacitance characteristic with at least one output capacitance maximum located at a voltage larger than 5% of a breakdown voltage of the semiconductor device. The output capacitance maximum is larger than 1.2 times an output capacitance at an output capacitance minimum located at a voltage between the voltage at the output capacitance maximum and 5% of a breakdown voltage of the semiconductor device.
Public/Granted literature
- US20190115467A1 Semiconductor Devices and Methods for Forming a Semiconductor Device Public/Granted day:2019-04-18
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