Invention Grant
- Patent Title: Embedded endpoint Fin reveal
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Application No.: US15784672Application Date: 2017-10-16
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Publication No.: US10770567B2Publication Date: 2020-09-08
- Inventor: Kangguo Cheng , Peng Xu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/3105 ; H01L21/311 ; H01L21/3065 ; H01L21/308
Abstract:
A semiconductor structure is provided. The semiconductor structure includes a plurality of fins formed from a substrate, at least one liner segment formed along a portion of the substrate, a first dielectric layer formed on the substrate and bounded by the liner segment, and a second dielectric layer formed within an interior of the liner segment.
Public/Granted literature
- US20180076301A1 EMBEDDED ENDPOINT FIN REVEAL Public/Granted day:2018-03-15
Information query
IPC分类:
