Invention Grant
- Patent Title: Image sensor with metal grids and manufacturing method thereof
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Application No.: US16108276Application Date: 2018-08-22
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Publication No.: US10770498B2Publication Date: 2020-09-08
- Inventor: De Kui Qi , Fu Cheng Chen , Jue Lu , Xuan Jie Liu
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai CN Beijing
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7202b426
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A method for manufacturing the image sensor includes providing a substrate structure; forming a mask layer on the substrate structure, the mask layer having openings; depositing a metal grid material covering a surface of the mask layer and a bottom of the openings; and stripping the mask layer for removing a portion of the metal grid material on the top surface of the mask layer. The substrate structure includes: a substrate having a first surface; a plurality of pixels in the substrate; isolation structures around each of the plurality of pixels; and an anti-reflective coating on the first surface of the substrate. The openings include first openings exposing a portion of the first surface of the substrate structure above the isolation structures. A remaining portion of the metal grid material at the bottom of the openings forms metal grids.
Public/Granted literature
- US20190067345A1 IMAGE SENSOR AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-02-28
Information query
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