Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US16123634Application Date: 2018-09-06
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Publication No.: US10770481B2Publication Date: 2020-09-08
- Inventor: Kiyotaka Miyano
- Applicant: NuFlare Technology, Inc.
- Applicant Address: JP Kanagawa
- Assignee: NuFlare Technology, Inc.
- Current Assignee: NuFlare Technology, Inc.
- Current Assignee Address: JP Kanagawa
- Agency: Rankin, Hill & Clark LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@37cf39c8
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/16 ; H01L29/778 ; H01L29/20 ; H01L29/04 ; H01L29/06 ; H01L21/02 ; H01L21/76 ; H01L21/8258 ; H01L27/088 ; H01L21/762
Abstract:
A semiconductor device includes: a silicon substrate having a first plane with a first plane orientation; a silicon oxide layer provided on a first region of the silicon substrate; a first silicon layer provided on the silicon oxide layer, the first silicon layer having a second plane with a second plane orientation different from the first plane orientation; and a wide-bandgap compound semiconductor layer having a hexagonal crystal structure.
Public/Granted literature
- US20190081078A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2019-03-14
Information query
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