Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16291107Application Date: 2019-03-04
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Publication No.: US10770471B2Publication Date: 2020-09-08
- Inventor: Kojiro Shimizu , Hanae Ishihara , Yumiko Miyano
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@769a61c0
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; H01L27/11582 ; H01L23/52
Abstract:
A semiconductor device according to an embodiment includes a first contact electrically connected to a first conductive layer with a diameter size smaller than a diameter size of a first support pillar at a region position on an inner side in a radial direction of the first support pillar in a first region and extending to the opposite side of the substrate with respect to the first conductive layer; and a second contact electrically connected to a second conductive layer with a diameter size smaller than a diameter size of a second support pillar at a position of penetrating through the first conductive layer at a region position on an inner side in a radial direction of the second support pillar in the first region and extending to the opposite side of the substrate with respect to the second conductive layer.
Public/Granted literature
- US20200051989A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-02-13
Information query
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