A Data Storage Device (DSD) includes a non-volatile memory configured to store data, and control circuitry configured to receive a memory access command from a host to access data in the non-volatile memory. A location is identified in the non-volatile memory for performing the memory access command using an Address Translation Layer (ATL) that has a finer logical-to-physical granularity than a logical-to-physical granularity of a logical block-based file system executed by the host or a granularity based on a memory Input/Output (IO) transaction size of a processor of the host. The non-volatile memory is accessed at the identified location to perform the memory access command.