Invention Grant
- Patent Title: Piezoelectric layer and piezoelectric device comprising the piezoelectric layer
-
Application No.: US16087749Application Date: 2017-03-30
-
Publication No.: US10763816B2Publication Date: 2020-09-01
- Inventor: Takahiko Yanagitani , Masashi Suzuki
- Applicant: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
- Applicant Address: SG Singapore
- Assignee: Avago Technologies International Sales PTE. Limited
- Current Assignee: Avago Technologies International Sales PTE. Limited
- Current Assignee Address: SG Singapore
- Agency: Foley & Lardner LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3a40ab7e
- International Application: PCT/IB2017/000451 WO 20170330
- International Announcement: WO2017/191499 WO 20171109
- Main IPC: H03H9/02
- IPC: H03H9/02 ; H03H9/64 ; C01B21/072 ; C23C14/06 ; C23C14/34 ; H01L41/187 ; H01L41/316 ; H03H9/13 ; H03H9/145 ; H03H9/17 ; H03H9/25 ; H03H9/56
Abstract:
A piezoelectric material is described. The piezoelectric material comprises aluminum nitride (AlN) doped with ytterbium (Yb), an atomic percentage of Yb in the AlN being greater than or equal to approximately 10.0% and less than or equal to approximately 27.0%. Piezoelectric layers comprising the piezoelectric material may be used in bulk acoustic wave (BAW) acoustic resonators, and surface acoustic wave (SAW) acoustic resonators. The BAW acoustic resonators and SAW acoustic resonators can be used in a variety of applications.
Public/Granted literature
- US20190089325A1 PIEZOELECTRIC LAYER AND PIEZOELECTRIC DEVICE COMPRISING THE PIEZOELECTRIC LAYER Public/Granted day:2019-03-21
Information query
