Invention Grant
- Patent Title: Method of manufacturing light emitting device
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Application No.: US16660503Application Date: 2019-10-22
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Publication No.: US10763641B2Publication Date: 2020-09-01
- Inventor: Shingo Tanisaka
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-shi
- Agency: Global IP Counselors, LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4d3b4fca
- Main IPC: H01S5/024
- IPC: H01S5/024 ; H01S5/02 ; H01S5/022 ; H01S5/042 ; H01S5/323 ; H01S5/22

Abstract:
A method of manufacturing a light emitting device comprising: providing an element-structure wafer having a first substrate and a laser element structure on the first substrate, the laser element structure having ridges on a side opposite to the first substrate and raising layers respectively formed above the ridges; bonding a laser element structure side of the element-structure wafer to a second substrate to obtain a bonded wafer; removing at least a portion of the first substrate to obtain a thinned bonded wafer; singulating the thinned bonded wafer to obtain a laser element with the second substrate; mounting the laser element with the second substrate on a heat dissipating member such that a laser element side of the laser element with the second substrate faces the heat dissipating member; and removing the second substrate from the laser element.
Public/Granted literature
- US20200052462A1 METHOD OF MANUFACTURING LIGHT EMITTING DEVICE Public/Granted day:2020-02-13
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