Invention Grant
- Patent Title: Self-aligned ion beam etch sputter mask for magnetoresistive random access memory
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Application No.: US16158791Application Date: 2018-10-12
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Publication No.: US10763429B2Publication Date: 2020-09-01
- Inventor: Steve Holmes , Bruce B. Doris , Hyun K. Lee
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L43/10 ; H01L43/08 ; H01L27/22
Abstract:
Embodiments of the present invention are directed to a method for fabricating a magnetoresistive random access memory (MRAM) device. A non-limiting example of the method includes depositing a dielectric layer on a contact arranged on a substrate including a magnetic tunnel junction (MTJ) pillar. The method includes reducing a width of the MTJ pillar. The method further includes depositing an encapsulation layer on the dielectric layer and the MTJ pillar.
Public/Granted literature
- US20200119261A1 SELF-ALIGNED ION BEAM ETCH SPUTTER MASK FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY Public/Granted day:2020-04-16
Information query
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