Invention Grant
- Patent Title: Light-emitting diode package
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Application No.: US16209992Application Date: 2018-12-05
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Publication No.: US10763402B2Publication Date: 2020-09-01
- Inventor: Shang-Hsun Tsai , Li-Wei Liu
- Applicant: Lextar Electronics Corporation
- Applicant Address: TW Hsinchu
- Assignee: Lextar Electronics Corporation
- Current Assignee: Lextar Electronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: CKC & Partners Co., LLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2d34a9f
- Main IPC: H01L33/50
- IPC: H01L33/50 ; H01L25/075 ; H01L33/62 ; H01L33/60

Abstract:
A light-emitting diode package includes a substrate, at least one light-emitting chip, a light-reflective layer and a wave-length conversion fluorescent layer. The light-emitting chip is located on the substrate. The light-reflective layer is arranged around the light-emitting chip. The wave-length conversion fluorescent layer is located over the light-emitting chip, wherein the light-reflective layer is spaced from the fluorescent wave-length conversion layer by a groove that reaches two opposite sides of the light-emitting diode package.
Public/Granted literature
- US20190245121A1 LIGHT-EMITTING DIODE PACKAGE Public/Granted day:2019-08-08
Information query
IPC分类: