Invention Grant
- Patent Title: Micro light emitting diode chip and display panel having semiconductor epitaxial structure
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Application No.: US15866473Application Date: 2018-01-10
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Publication No.: US10763393B2Publication Date: 2020-09-01
- Inventor: Yu-Hung Lai , Yu-Yun Lo , Tzu-Yang Lin
- Applicant: PlayNitride Inc.
- Applicant Address: TW Hsinchu County
- Assignee: PlayNitride Inc.
- Current Assignee: PlayNitride Inc.
- Current Assignee Address: TW Hsinchu County
- Agency: JCIPRNET
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7663abf
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L27/146 ; C30B25/18 ; G09G3/32 ; H01L25/075 ; H01L27/12 ; C30B29/40 ; H01L27/15 ; H01L33/08 ; H01L25/16 ; H01L33/38

Abstract:
A micro light emitting diode chip having a plurality of light-emitting regions, including a semiconductor epitaxial structure, a first electrode and a plurality of second electrodes disposed at interval is provided. The semiconductor epitaxial structure includes a first-type doped semiconductor layer, a plurality of second-type doped semiconductor layers and a plurality of light-emitting layers disposed at interval. The light-emitting layers are located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The light-emitting layers are located in the light-emitting regions respectively and electrically contact to the first-type doped semiconductor layer. The first electrode is electrically connected and contacts to the first-type doped semiconductor layers. The second electrodes are electrically connected to the second-type doped semiconductor layers. Furthermore, a display panel is also provided.
Public/Granted literature
- US20180198020A1 MICRO LIGHT EMITTING DIODE CHIP AND DISPLAY PANEL Public/Granted day:2018-07-12
Information query
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