Invention Grant
- Patent Title: Cascade tunneling field effect transistors
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Application No.: US16407771Application Date: 2019-05-09
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Publication No.: US10763367B2Publication Date: 2020-09-01
- Inventor: Tillmann C. Kubis , Prasad Sarangapani
- Applicant: Purdue Research Foundation
- Applicant Address: US IN West Lafayette
- Assignee: Purdue Research Foundation
- Current Assignee: Purdue Research Foundation
- Current Assignee Address: US IN West Lafayette
- Agency: Maginot, Moore & Beck LLP
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/78 ; H01L29/66
Abstract:
A tunnel field-effect transistor (TFET) includes a fin, an insulator layer, and at least one gate. The fin has a doped first region, a doped second region, and an interior region between the first region and the second region. The interior region is undoped or is more lightly doped than the first region and the second region. At least the interior region of the fin formed as a type II superlattice, wherein materials of the superlattice alternate vertically. The insulator layer is formed around the interior region. The gate is formed on at least a portion of the insulator region. The insulator layer and the at least one gate are configured to generate an inhomogeneous electrostatic potential within the interior region.
Information query
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