- Patent Title: Ferroelectric memory device and method of manufacturing the same
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Application No.: US15868583Application Date: 2018-01-11
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Publication No.: US10763360B2Publication Date: 2020-09-01
- Inventor: Hyangkeun Yoo
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@54b8861f
- Main IPC: H01L27/11507
- IPC: H01L27/11507 ; H01L29/78 ; H01L29/423 ; H01L29/51 ; H01L29/66 ; H01L21/28
Abstract:
A ferroelectric memory device includes a substrate having a source region and a drain region, a first ferroelectric material layer and a second ferroelectric material layer sequentially stacked on the substrate, and a gate electrode layer disposed on the second ferroelectric material layer. The second ferroelectric material layer has an oxygen vacancy concentration different from that of the first ferroelectric material layer.
Public/Granted literature
- US20180286988A1 FERROELECTRIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-10-04
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