A first p+-type region in contact with a bottom of a gate trench is disposed in a striped shape extending along a first direction that is orthogonal to a second direction along which the gate trench extends in a striped shape, as viewed from a front surface of a silicon carbide substrate. As a result, trench gate MOSFETs are disposed in parallel at a predetermined cell pitch along the first direction. A flat SBD is disposed at a predetermined cell pitch along the second direction. The cell pitch of the trench gate MOSFET and the cell pitch of the flat SBD may be set independently of each other.