Invention Grant
- Patent Title: Vertical trench DMOSFET having integrated implants forming enhancement diodes in parallel with the body diode
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Application No.: US15061853Application Date: 2016-03-04
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Publication No.: US10763351B2Publication Date: 2020-09-01
- Inventor: Ji Pan , Anup Bhalla
- Applicant: Alpha and Omega Semiconductor Incorporated
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agency: Van Pelt, Yi & James LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/10 ; H01L29/423 ; H01L29/66 ; H01L29/861 ; H01L29/872 ; H01L21/265 ; H01L21/306 ; H01L29/417 ; H01L29/47
Abstract:
Fabricating a semiconductor device comprises: forming a gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the gate trench; forming a body in the epitaxial layer; forming a source embedded in the body; forming a contact trench that extends through the source and at least part of the body; disposing an implant at least along a contact trench wall; and disposing an epitaxial enhancement portion below the contact trench and in contact with the implant.
Public/Granted literature
- US20160190283A1 FABRICATION OF MOSFET DEVICE WITH REDUCED BREAKDOWN VOLTAGE Public/Granted day:2016-06-30
Information query
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