Invention Grant
- Patent Title: Quantum dot devices with modulation doped stacks
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Application No.: US16097730Application Date: 2016-06-29
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Publication No.: US10763349B2Publication Date: 2020-09-01
- Inventor: Ravi Pillarisetty , Van H. Le , Jeanette M. Roberts , James S. Clarke , Zachary R. Yoscovits , David J. Michalak
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Patent Capital Group
- International Application: PCT/US2016/039953 WO 20160629
- International Announcement: WO2018/004554 WO 20180104
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/06 ; H01L29/12 ; H01L29/66 ; H01L29/786 ; H01L29/15 ; H01L49/00 ; H01L27/088 ; H01L29/775 ; H01L29/417 ; H01L29/78

Abstract:
Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer, a doped layer, and a barrier layer disposed between the doped layer and the quantum well layer; and gates disposed above the quantum well stack. The doped layer may include a first material and a dopant, the first material may have a first diffusivity of the dopant, the barrier layer may include a second material having a second diffusivity of the dopant, and the second diffusivity may be less than the first diffusivity.
Public/Granted literature
- US20190363181A1 QUANTUM DOT DEVICES WITH MODULATION DOPED STACKS Public/Granted day:2019-11-28
Information query
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