Invention Grant
- Patent Title: Nitride semiconductor device and method of manufacturing nitride semiconductor device
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Application No.: US16285944Application Date: 2019-02-26
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Publication No.: US10763333B2Publication Date: 2020-09-01
- Inventor: Kazuyoshi Tomita , Tetsuo Narita
- Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Applicant Address: JP Nagakute-Shi
- Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Current Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Current Assignee Address: JP Nagakute-Shi
- Agency: Oliff PLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6ced7a0a
- Main IPC: H01L29/872
- IPC: H01L29/872 ; H01L21/02 ; H01L29/78 ; H01L29/20 ; H01L29/861 ; H01L29/66
Abstract:
A nitride semiconductor device may comprise a p-type layer. The nitride semiconductor device may comprise a first n-type voltage-blocking layer in contact with the p-type layer. The nitride semiconductor device may comprise a second n-type voltage-blocking layer in contact with the first n-type voltage-blocking layer and separated from the p-type layer by the first n-type voltage-blocking layer. A donor concentration in the first n-type voltage-blocking layer may be lower than a donor concentration in the second n-type voltage-blocking layer. A carbon concentration in the first n-type voltage-blocking layer may be lower than a carbon concentration in the second n-type voltage-blocking layer.
Public/Granted literature
- US20190305090A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE Public/Granted day:2019-10-03
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