A method of forming a semiconductor structure includes forming a middle-of-line (MOL) oxide layer in the semiconductor structure. The MOL oxide layer including multiple gate stacks formed on a substrate. A nitride layer is formed over a silicide in the MOL oxide layer. At least one self-aligned contact area (CA) element is formed within the nitride layer. The MOL oxide layer is selectively recessed on a first side and a second side of the at least one self-aligned CA element leaving remaining portions of the MOL oxide layer on the nitride layer and a nitride. A nitride cap of the plurality of gate stacks is selectively recessed. An air-gap oxide layer is deposited for introducing one or more air-gaps in the deposited air-gap oxide layer. The air gap oxide layer is reduced to the at least one self-aligned CA element and the nitride layer.