A method is provided for forming an integrated thin film resistor (TFR) in a semiconductor integrated circuit device. A first dielectric layer is deposited on an integrated circuit (IC) structure including conductive contacts, a resistive film (e.g., comprising SiCCr, SiCr, CrSiN, TaN, Ta2Si, or TiN) is deposited over the first dielectric layer, the resistive film is etched to define the dimensions of the resistive film, and a second dielectric layer is deposited over the resistive film, such that the resistive film is sandwiched between the first and second dielectric layers. An interconnect trench layer may be deposited over the second dielectric layer and etched, e.g., using a single mask, to define openings that expose surfaces of the IC structure contacts and the resistive film. The openings may be filled with a conductive interconnect material, e.g., copper, to contact the exposed surfaces of the conductive contacts and the resistive film.