Invention Grant
- Patent Title: Micro light emission element and image display device
-
Application No.: US16414041Application Date: 2019-05-16
-
Publication No.: US10763303B2Publication Date: 2020-09-01
- Inventor: Katsuji Iguchi
- Applicant: SHARP KABUSHIKI KAISHA
- Applicant Address: JP Sakai, Osaka
- Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee Address: JP Sakai, Osaka
- Agency: ScienBiziP, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3be65d9d
- Main IPC: H01S5/183
- IPC: H01S5/183 ; H01L27/15 ; H01L33/40 ; H01L33/62 ; H01L33/44 ; H01L33/24 ; H01S5/42 ; H01L25/18 ; H01L25/00 ; H01S5/042 ; H01S5/028 ; H01S5/022 ; H01L33/38 ; H01S5/30 ; H01L33/00 ; H01L33/42 ; H01L33/30

Abstract:
Provided is a micro light emission element including a compound semiconductor in which an N-side layer, a light emission layer, and a P-side layer are laminated sequentially from a side of a light emitting surface, in which an N-electrode coupled to the N-side layer and a P-electrode coupled to the P-side layer are disposed on another surface opposite to the light emitting surface, the P-electrode is disposed on the light emission layer, the N-electrode is disposed in an isolation region which is a boundary region of the micro light emission element and isolates the light emission layer from a light emission layer of another micro light emission element, a surface of the N-electrode on a side of the other surface and a surface of the P-electrode on the side of the other surface are flush with each other, and the N-electrode and the P-electrode are both formed of a single interconnection layer.
Public/Granted literature
- US20190355786A1 MICRO LIGHT EMISSION ELEMENT AND IMAGE DISPLAY DEVICE Public/Granted day:2019-11-21
Information query