Invention Grant
- Patent Title: Semiconductor device having equivalent series resistance unit
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Application No.: US16262700Application Date: 2019-01-30
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Publication No.: US10763263B2Publication Date: 2020-09-01
- Inventor: Ken Ota
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L23/522 ; H01L23/532 ; H01L23/528
Abstract:
Disclosed herein is an apparatus that includes: a first conductive layer having a first common pattern and a plurality of first branch patterns arranged in a first direction, one end of each of the first branch patterns being connected to the first common pattern; a second conductive layer having a second common pattern and a plurality of second branch patterns arranged in the first direction, one end of at least one of the second branch patterns being connected to the second common pattern; an insulating layer formed between the first and second conductive layers; and a plurality of via electrodes penetrating through the insulating layer, other end of each of the first branch patterns being connected to an associated one of other end of each of the second branch patterns.
Public/Granted literature
- US20200243542A1 SEMICONDUCTOR DEVICE HAVING EQUIVALENT SERIES RESISTANCE UNIT Public/Granted day:2020-07-30
Information query
IPC分类:
