Invention Grant
- Patent Title: Semiconductor device structure
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Application No.: US16196642Application Date: 2018-11-20
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Publication No.: US10763178B2Publication Date: 2020-09-01
- Inventor: Ming-Heng Tsai , Chun-Sheng Liang , Pei-Lin Wu , Yi-Ren Chen , Shih-Hsun Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8238 ; H01L29/08 ; H01L29/161 ; H01L29/16 ; H01L29/165 ; H01L29/24 ; H01L29/267 ; H01L21/8234 ; H01L29/423 ; H01L29/49
Abstract:
A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The gate stack has a first upper portion and a first lower portion, and the first upper portion is wider than the first lower portion. The semiconductor device structure includes a spacer layer surrounding the gate stack. The spacer layer has a second upper portion and a second lower portion. The second upper portion is thinner than the second lower portion.
Public/Granted literature
- US20190109051A1 SEMICONDUCTOR DEVICE STRUCTURE Public/Granted day:2019-04-11
Information query
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