An embodiment of the present disclosure provides a method of manufacturing a semiconductor apparatus, including the following steps. A) forming a semiconductor device element in a Si active layer of an insulating isolation Si substrate including the Si active layer, a buried insulating layer, and a Si supporting substrate arranged in this order; B) forming a plurality of through electrode holes penetrating the Si active layer and the buried insulating layer to reach a partial region of the Si supporting substrate in an element region layer including the formed semiconductor device element; C) forming a through silicon via by sequentially forming an insulating film, a barrier film, and a Cu film inside the through electrode hole to completely fill the through electrode hole; D) forming a multilayer wiring layer including a wiring layer connected to the semiconductor device element on an outer surface of the element region layer in which the through silicon via is formed; and E) exposing the Cu film of the through silicon via by removing the Si supporting substrate after forming the multilayer wiring layer.