Invention Grant
- Patent Title: Integrated circuit device and method of manufacturing the same
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Application No.: US16242122Application Date: 2019-01-08
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Publication No.: US10763163B2Publication Date: 2020-09-01
- Inventor: Su-jeong Park , Dong-chan Lim , Kwang-jin Moon , Ju-bin Seo , Ju-il Choi , Atsushi Fujisaki
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@14f87c16
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768

Abstract:
An integrated circuit device includes a substrate, a landing pad on the substrate, and a through-via structure passing through the substrate and connected to the landing pad. The through-via structure may include a conductive plug, a first conductive barrier layer covering a sidewall and a lower surface of the conductive plug, and a second conductive barrier layer covering a sidewall of the first conductive barrier layer.
Public/Granted literature
- US20200027784A1 INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-01-23
Information query
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