Invention Grant
- Patent Title: Etching apparatus and etching method
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Application No.: US16393261Application Date: 2019-04-24
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Publication No.: US10763126B2Publication Date: 2020-09-01
- Inventor: Koichi Nagami , Kazuya Nagaseki
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@f6d74d3
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01J37/32 ; H01L21/3065 ; H01L21/14 ; H01L21/67

Abstract:
An etching apparatus includes: a placement table serving as a lower electrode and configured to place a workpiece to be subjected to an etching processing thereon; a DC power supply configured to generate a negative DC voltage applied to the placement table; and a controller configured to: periodically apply a negative DC voltage to the placement table from the DC power supply when the etching processing on the workpiece placed on the placement table is initiated, and decrease a frequency of the negative DC voltage applied to the placement table with an elapse of processing time of the etching processing.
Public/Granted literature
- US20190333739A1 ETCHING APPARATUS AND ETCHING METHOD Public/Granted day:2019-10-31
Information query
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