Invention Grant
- Patent Title: Method and system for forming doped regions by diffusion gallium nitride materials
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Application No.: US16271704Application Date: 2019-02-08
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Publication No.: US10763110B2Publication Date: 2020-09-01
- Inventor: Ozgur Aktas , Vladimir Odnoblyudov , Cem Basceri
- Applicant: QROMIS, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: QROMIS, INC.
- Current Assignee: QROMIS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/22
- IPC: H01L21/22 ; H01L21/02 ; H01L29/66 ; H01L29/06 ; H01L29/20 ; H01L29/205 ; H01L29/207 ; H01L29/861 ; H01L29/778 ; H01L29/872
Abstract:
A method of forming doped regions by diffusion in gallium nitride materials includes providing a substrate structure including a gallium nitride layer and forming a mask on the gallium nitride layer. The mask exposes one or more portions of a top surface of the gallium nitride layer. The method also includes depositing a magnesium-containing gallium nitride layer on the one or more portions of the top surface of the gallium nitride layer and concurrently with depositing the magnesium-containing gallium nitride layer, forming one or more magnesium-doped regions in the gallium nitride layer by diffusing magnesium into the gallium nitride layer through the one or more portions. The magnesium-containing gallium nitride layer provides a source of magnesium dopants. The method further includes removing the magnesium-containing gallium nitride layer and removing the mask.
Public/Granted literature
- US20190252186A1 METHOD AND SYSTEM FOR FORMING DOPED REGIONS BY DIFFUSION GALLIUM NITRIDE MATERIALS Public/Granted day:2019-08-15
Information query
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