Invention Grant
- Patent Title: Methods of manufacturing engineered substrate structures for power and RF applications
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Application No.: US16287782Application Date: 2019-02-27
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Publication No.: US10763109B2Publication Date: 2020-09-01
- Inventor: Vladimir Odnoblyudov , Cem Basceri , Shari Farrens
- Applicant: QROMIS, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Qromis, Inc.
- Current Assignee: Qromis, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/8252 ; H01L29/20 ; C30B33/08 ; H01L21/74 ; H01L23/535 ; C30B29/06 ; C30B29/40 ; C30B29/68 ; C23C16/24 ; C23C16/34 ; C30B25/18 ; C30B33/06 ; C23C16/30 ; H01L29/778 ; H01L29/80 ; H01L21/762

Abstract:
A method of manufacturing a substrate includes forming a support structure by providing a polycrystalline ceramic core, encapsulating the polycrystalline ceramic core in a first adhesion shell, encapsulating the first adhesion shell in a conductive shell, encapsulating the conductive shell in a second adhesion shell, and encapsulating the second adhesion shell in a barrier shell. The method also includes joining a bonding layer to the support structure, joining a substantially single crystalline silicon layer to the bonding layer, forming an epitaxial silicon layer by epitaxial growth on the substantially single crystalline silicon layer, and forming one or more epitaxial III-V layers by epitaxial growth on the epitaxial silicon layer.
Public/Granted literature
- US20190198311A1 METHODS OF MANUFACTURING ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS Public/Granted day:2019-06-27
Information query
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