Methods and apparatuses suitable for encapsulation layers for memory devices at temperatures less than about 300° C. are provided herein. Methods involve introducing a reactive species by pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300° C.