Invention Grant
- Patent Title: Chamber of plasma system, liner for plasma system and method for installing liner to plasma system
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Application No.: US15060608Application Date: 2016-03-04
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Publication No.: US10763082B2Publication Date: 2020-09-01
- Inventor: Chung-Hsien Liao , Wen-Pao Tsai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01J37/32
- IPC: H01J37/32
Abstract:
A chamber of a plasma system includes a chamber wall defining a plasma processing area, a substrate supporter configured to support a substrate in the plasma processing area, and a liner located in the plasma processing area and separating the chamber wall from the plasma processing area. A liner for a plasma system and a method for installing a liner to a plasma system are also provided.
Public/Granted literature
- US20170256383A1 CHAMBER OF PLASMA SYSTEM, LINER FOR PLASMA SYSTEM AND METHOD FOR INSTALLING LINER TO PLASMA SYSTEM Public/Granted day:2017-09-07
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