A two-dimensional accessible non-volatile memory apparatus includes an array comprising a plurality of non-volatile memory cells, the array being a crossbar-based non-volatile memory structure, the memory cells being arranged in a plurality of rows and a plurality of columns. The apparatus further includes row read/write circuitry coupled to the array and structured and configured to provide read and write access to the memory cells in any one of the rows on an individual row basis, and column read/write circuitry coupled to the array and structured and configured to provide read and write access to the memory cells in any one of the columns on an individual column basis.