Invention Grant
- Patent Title: Quantum metrology and quantum memory using defect sates with spin-3/2 or higher half-spin multiplets
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Application No.: US16684673Application Date: 2019-11-15
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Publication No.: US10762954B2Publication Date: 2020-09-01
- Inventor: Öney Soykal , Thomas L. Reinecke , Samuel G. Carter
- Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
- Applicant Address: US DC Washington
- Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
- Current Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agency: US Naval Research Laboratory
- Agent Joslyn Barritt
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C11/44 ; G11C11/16 ; B81B3/00 ; G11C13/04 ; G11C13/06 ; G11C11/42 ; B82Y10/00 ; G06N10/00
Abstract:
Devices and methods for the detection of magnetic fields, strain, and temperature using the spin states of a VSi− monovacancy defect in silicon carbide, as well as quantum memory devices and methods for creation of quantum memory using the spin states of a VSi− monovacancy defect in silicon carbide.
Public/Granted literature
- US20200098424A1 Quantum Metrology and Quantum Memory Using Defect Sates with Spin -3/2 or Higher Half-Spin Multiplets Public/Granted day:2020-03-26
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