Invention Grant
- Patent Title: Pattern density analysis method
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Application No.: US16203624Application Date: 2018-11-29
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Publication No.: US10762272B2Publication Date: 2020-09-01
- Inventor: Wei Cheng , Zhonghua Zhu , Fang Wei
- Applicant: Shanghai Huali Microelectronics Corporation
- Agency: Kilpatrick Townsend & Stockton
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7561e370
- Main IPC: G06F30/398
- IPC: G06F30/398 ; G06F119/18 ; G06F30/39 ; H01L27/02 ; G03F1/68 ; G06F30/392

Abstract:
The present disclosure provides a pattern density analysis method for analyzing a local pattern density of a layout, the method comprising: obtaining a pattern attribute of each layout pattern located on a layout region to be analyzed; setting, for each layout pattern, a relevant window for the layout pattern based on the corresponding pattern attribute; calculating the pattern density of each relevant window; and selecting the maximum value of the pattern densities of the relevant windows as the maximum local pattern density of the layout, and selecting the minimum value of the pattern densities of the relevant windows as the minimum local pattern density of the layout.
Public/Granted literature
- US20200104455A1 PATTERN DENSITY ANALYSIS METHOD Public/Granted day:2020-04-02
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