Invention Grant
- Patent Title: Memory with error correction function that is compatible with different data length and an error correction method
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Application No.: US15982297Application Date: 2018-05-17
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Publication No.: US10761930B2Publication Date: 2020-09-01
- Inventor: Ni Fu
- Applicant: XI'AN UNIIC SEMICONDUCTORS CO., LTD.
- Applicant Address: CN Xi'an, Shaanxi
- Assignee: Xi'an UNIIC Semiconductors Co., Ltd.
- Current Assignee: Xi'an UNIIC Semiconductors Co., Ltd.
- Current Assignee Address: CN Xi'an, Shaanxi
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5cd23d4f
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G06F3/06

Abstract:
The present invention relates to a memory with error correction function, comprising a data array, an ECC array, an ECC encoding module, an ECC decoding module, a first data selection module, a second data selection module and a data output module; wherein when data is being written, the first data selection module receives the data to be written, and determines whether to receive the data from the data array in response to a control signal that affects the length of the data; when data is being read, the second data selection module controls the length of the data output from the data output module in response to the control signal that affects the length of the data. The invention further relates to a method of correcting errors in a memory.
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